Processing apparatus, transferring apparatus, and transferring method

ABSTRACT

Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a processing apparatus, whichprocesses a target substrate such as a silicon wafer used as a materialof a semiconductor device, and a transferring apparatus and atransferring method used for the processing apparatus, in particular, tothe processing apparatus that deposits various types of films on thefront surface of a target substrate and the transferring apparatus andthe transferring method used for the processing apparatus that depositsvarious types of films on the front surface of a target substrate.

[0003] 2. Description of the Related Art

[0004] In a fabricating method for a semiconductor device that has beenwidely and conventionally used, various types of thin films such as anoxide film, a nitride film, and a nitrogen oxide film are deposited in apredetermined sectional shape on the front surface of a silicon wafer(that is hereinafter simply referred to as “wafer”). Such various typesof thin films are deposited by for example a CVD (Chemical VaporDeposition) unit. As a method for laminating a plurality of thin filmson a wafer, a so-called multi-chamber type fabricating apparatus isknown. In the multi-chamber type fabricating apparatus, a plurality ofCVD units are connected with a single transferring chamber. FIG. 28 is aplan view showing an outlined structure of a typical multi-chamber typeprocessing apparatus 300.

[0005] In the multi-chamber type processing apparatus 300, a pluralityof processing units 310 to 315 that deposit respective thin films areradially disposed on the outer periphery of a transferring chamber 301disposed nearly at the center of the apparatus 300. Transferring arms303 and 304 are disposed in the transferring chamber 301. After acarrier cassette C that contains a plurality of untreated wafers W isplaced on a holding table 305, the processing apparatus 300 isactivated. First of all, a sub arm 306 takes out a wafer W from thecarrier cassette C and temporarily places the wafer W in a load lockchamber 307. Thereafter, the transferring arm 303 is operated to takeout the wafer W from the load lock chamber 307 and convey the wafer W tothe transferring chamber 301. The transferring arm 303 loads and unloadsthe wafer W between each of the processing units 310 to 315 and thetransferring chamber 301 in a predetermined sequence so that a pluralityof thin films are deposited on the wafer W.

[0006] In recent semiconductor apparatuses, there are needs to increasethe number of films to be deposited and to decrease the thicknessthereof. However, when the number of thin films is increased, theforgoing six-chamber type processing apparatus 300 that has sixprocessing units cannot deposit all the desired thin films. To solvesuch a problem, a plurality of six-chamber type processing apparatusessuch as multi-chamber type processing apparatuses 300 are disposed. Inthis case, after films are deposited on a wafer W by one processingapparatus, the wafer W is removed therefrom and conveyed to the adjacentprocessing apparatus in which other films are deposited on the wafer W.

[0007] However, when a wafer W on which a thin film is being depositedin a process atmosphere is exposed to outer air, an oxide film is formedon the front surface of the wafer W. Thus, a step that removes the oxidefilm is additionally required. In other words, the fabricationefficiency deteriorates. In addition, since thinner films are required,when a wafer W is taken out from a process atmosphere, a thin filmdeposited on the front surface of the wafer W deteriorates. As a result,the quality of the semiconductor device as a final product deteriorates.In addition, when two multi-chamber type processing apparatus 300 aredisposed, the installation area (the footprint) becomes large. As aresult, the facility cost and the fabrication cost of the final productrise.

SUMMARY OF THE INVENTION

[0008] The present invention is made for solving the forgoing existingproblems. In other words, the present invention is to provide aprocessing apparatus that can fabricate a semiconductor device with ahigh process efficiency and high quality and a transferring apparatusand a transferring method that are used for the processing apparatus.

[0009] A first aspect of the present invention is a processingapparatus, comprising a substrate container holding table that can holda substrate container that contains a plurality of target substrates, afirst transferring chamber that is disposed adjacent to the substratecontainer holding table and that maintains the interior at a firstpressure, a first processing unit group disposed around the firsttransferring chamber and that processes a target substrate at the firstpressure, a first transferring mechanism that is disposed in the firsttransferring chamber and that transfers a target substrate, a secondtransferring chamber that is disposed adjacent to the first transferringchamber and that maintains the interior at a second pressure, a secondprocessing unit group that is disposed around the second transferringchamber and that processes a target substrate at the second pressure,and a second transferring mechanism disposed in the second transferringchamber, wherein the first transferring mechanism and/or the secondtransferring mechanism has at least two transferring arms.

[0010] A second aspect of the present invention is a processingapparatus, comprising a substrate container holding table that holds asubstrate container that contains a plurality of target substrates, atransferring chamber that is disposed adjacent to the substratecontainer holding table and that maintains the interior at apredetermined pressure, at least two processing units that are disposedaround the transferring chamber, that process a target substrate at thepredetermined pressure, and that are selected from the group consistingof a titanium nitride layer depositing unit, a tantalum nitride layerdepositing unit, and a tungsten nitride layer depositing unit, at leasttwo titanium layer depositing units that are disposed around thetransferring chamber and that process a target substrate at thepredetermined pressure, at least two tungsten layer depositing unitsthat are disposed around the transferring chamber and that process atarget substrate at the predetermined pressure, at least onepre-cleaning unit that is disposed around the transferring chamber andthat processes a target substrate at the predetermined pressure, and atleast three transferring arms that are disposed in the transferringchamber and that transfer a target substrate.

[0011] A thrid aspect of the present invention is a processingapparatus, comprising a substrate container holding table that holds asubstrate container that contains a plurality of target substrates, atransferring chamber that is disposed adjacent to the substratecontainer holding table and that maintains the interior at apredetermined pressure, at least two units that are disposed around thetransferring chamber, that process a target substrate at thepredetermined pressure, and that are selected from the group consistingof a titanium nitride layer depositing unit, a tantalum nitride layerdepositing unit, and a tungsten nitride layer depositing unit, at leasttwo tantalum layer depositing units that are disposed around thetransferring chamber and that process a target substrate at thepredetermined pressure, at least two copper layer depositing units thatare disposed around the transferring chamber and that process a targetsubstrate at the predetermined pressure, at least one pre-cleaning unitthat is disposed around the transferring chamber and that processes atarget substrate at the predetermined pressure, and at least threetransferring arms that are disposed in the transferring chamber and thattransfer a target substrate.

[0012] A fourth aspect of the present invention is a processingapparatus, comprising a substrate container holding table that holds asubstrate container that contains a plurality of target substrates, atransferring chamber that is disposed adjacent to the substratecontainer holding table and that maintains the interior at apredetermined pressure, a processing unit that is disposed around thetransferring chamber, that processes a target substrate at thepredetermined pressure, and that is selected from the group consistingof a pre-cleaning unit, an alumina layer depositing unit, a zirconiumoxide layer depositing unit, a zirconium silicate layer depositing unit,a hafnium oxide layer depositing unit, a hafnium silicate layerdepositing unit, an yttrium oxide layer depositing unit, an yttriumsilicate layer depositing unit, a lanthanum oxide layer depositing unit,a lanthanum silicate layer depositing unit, an oxide layer forming unit,a nitride layer forming unit, a manganese layer depositing unit, aniobium layer depositing unit, an aluminum layer depositing unit, amolybdenum layer depositing unit, a zirconium layer depositing unit, avanadium layer depositing unit, a cobalt layer depositing unit, arhenium layer depositing unit, an iridium layer depositing unit, aplatinum layer depositing unit, a ruthenium oxide layer depositing unit,an annealing unit, and a tungsten layer depositing unit, and at leastthree transferring arms that are disposed in the transferring chamberand that transfer a target substrate.

[0013] According to the present invention, since many processing unitsare disposed around a transferring chamber, a processing apparatus thatcan process a wafer W at an improved speed can be provided. In addition,processes that require different pressure environments can besuccessively performed through the transferring chamber. Thus, since itis not necessary to expose a target substrate to outer air, the targetsubstrate can be processed in high quality.

[0014] A fifth aspect of the present invention is a transferringapparatus, comprising an arm that can be expanded, contracted, andswiveled, and a target substrate holding member that is disposed on theforward end side of the arm and that has a shape asymmetrical to thedirection in which the arm is expanded and contracted.

[0015] According to the present invention, with the processingapparatus, a target substrate can be directly transferred betweentransferring units. As a result, the process efficiency of theprocessing apparatus can be improved.

[0016] A sixth aspect of the present invention is a transferring methodof two transferring arms that can be expanded, contracted, and swiveledand that are adjacently disposed, each of the transferring arms having atarget substrate holding member, the target substrate holding memberhaving a concave portion and a convex portion facing the othertransferring arm, the method comprising causing the target substrateholding member of the first transferring arm to be expanded towardnearly the center of the swiveling of the second transferring arm andthe target substrate holding member of the second transferring arm to beexpanded toward a direction deviating from the center of the swivelingof the first transferring arm so that the concave portion and the convexportion of the target substrate holding member of the first transferringarm face the convex portion and the concave portion of the targetsubstrate holding member of the second transferring arm, respectively,and transferring the target substrate between the first transferring armand the second transferring arm.

[0017] A seventh aspect of the present invention is a transferringmethod of two transferring arms that can be expanded, contracted, andswiveled and that are adjacently disposed, each of the transferring armshaving a target substrate holding member, the target substrate holdingmember having a concave portion and a convex portion facing the othertransferring arm, the method comprising causing the target substrateholding member of the first transferring arm to be expanded toward adirection deviating from the center of the swiveling of the secondtransferring arm and the target substrate holding member of the secondtransferring arm to be expanded toward a direction deviating from thecenter of the swiveling of the first transferring arm so that theconcave portion and the convex portion of the target substrate holdingmember of the first transferring arm face the convex portion and theconcave portion of the target substrate holding member of the secondtransferring arm, respectively, and transferring the target substratebetween the first transferring arm and the second transferring arm.

[0018] According to the present invention, a target substrate can bedirectly transferred between transferring units. Thus, the processefficient of the processing apparatus can be improved.

[0019] In the specification of the present patent application, unlessotherwise specified, “processing units” include those that not onlyphysically and/or chemically react to a target substrate, but measureand/or inspect the film quality, film thickness, and particles of thetarget substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention is described referring to the accompanyingdrawings, and it is to be understood that such drawings are offered forthe purpose of illustration only and do not limit the invention in anycase.

[0021]FIG. 1 is a plan view showing a processing apparatus according toa first embodiment of the present invention.

[0022]FIG. 2 is a vertical sectional view showing a pre-cleaning unit ofthe processing apparatus according to the first embodiment of thepresent invention.

[0023]FIG. 3 is a vertical sectional view showing a CVD unit of theprocessing apparatus according to the first embodiment of the presentinvention.

[0024]FIG. 4 is a vertical sectional view showing an ALD unit of theprocessing apparatus according to the first embodiment of the presentinvention.

[0025]FIG. 5 is a flow chart for which the processing apparatusaccording to the first embodiment of the present invention fabricates asemiconductor device.

[0026]FIGS. 6A, 6B, 6C, 6D, and 6E are vertical sectional views showinga semiconductor device fabricated by the processing apparatus accordingto the first embodiment of the present invention.

[0027]FIG. 7 is a graph that compares the area efficiency of theprocessing apparatus according to the first embodiment of the presentinvention and the area efficiency of an existing apparatus.

[0028]FIG. 8 is a graph that compares the process speed of theprocessing apparatus according to the first embodiment of the presentinvention and the process speed of an existing apparatus.

[0029]FIGS. 9A, 9B, and 9C are schematic diagrams showing the structureand the expanding and contracting operations of a transferring armapplicable for the processing apparatus according to the firstembodiment of the present invention.

[0030]FIGS. 10A, 10B, and 10C are schematic diagrams showing swivelingoperations of the transferring arm shown in FIGS. 9A, 9B, and 9C,respectively.

[0031]FIG. 11 is a schematic diagram for explaining the transferringoperations for a target substrate by the two transferring arms shown inFIGS. 9A, 9B, 9C, 10A, 10B, and 10C.

[0032]FIGS. 12A, 12B, and 12C are schematic diagrams for explaining aloading operation and an unloading operation for a target substrate toand from a processing unit by the transferring arms shown in FIGS. 9A,9B, 9C, 10A, 10B, and 10C.

[0033]FIGS. 13A, 13B, and 13C are schematic diagrams for explaininganother loading operation and another unloading operation for a targetsubstrate to and from a processing unit by the transferring arms shownin FIGS. 9A, 9B, 9C, 10A, 10B, and 10C.

[0034]FIG. 14 is a schematic diagram for explaining a transferringoperation for a target substrate by two transferring arms that aredifferent from the transferring arms shown in FIGS. 9A, 9B, 9C, 10A,10B, and 10C.

[0035]FIGS. 15A, 15B, and 15C are schematic diagrams for explaining aloading operation and an unloading operation of a target substrate toand from a processing unit by the transferring arms shown in FIG. 14.

[0036]FIG. 16 is a plan view showing a processing apparatus according toa second embodiment of the present invention.

[0037]FIG. 17 is a vertical sectional view showing a reactive clean unitof the processing apparatus according to the second embodiment of thepresent invention.

[0038]FIG. 18 is a vertical sectional view showing a spattering unit ofthe processing apparatus according to the second embodiment of thepresent invention.

[0039]FIG. 19 is a flow chart for which the processing apparatusaccording to the second embodiment of the present invention fabricates asemiconductor device.

[0040]FIGS. 20A, 20B, 20C, 20D, and 20E are vertical sectional viewsshowing a semiconductor device fabricated by the processing apparatusaccording to the second embodiment of the present invention.

[0041]FIG. 21 is a plan view showing a processing apparatus according toa third embodiment of the present invention.

[0042]FIG. 22 is a plan view showing a processing apparatus according toa fourth embodiment of the present invention.

[0043]FIG. 23 is a flow chart showing a process for which the processingapparatus according to the fourth embodiment of the present invention isoperated.

[0044]FIGS. 24A, 24B, 24C, 24D, 24E, and 24F are vertical sectionalviews showing a semiconductor device fabricated by the processingapparatus according to the fourth embodiment of the present invention.

[0045]FIGS. 25A and 25B are vertical sectional views, which succeed FIG.24F, showing a semiconductor device fabricated by the processingapparatus according to the fourth embodiment of the present invention.

[0046]FIGS. 26A and 26B are plan views showing a processing apparatusaccording to a fifth embodiment of the present invention.

[0047]FIG. 27 is a plan view showing a processing apparatus according toa sixth embodiment of the present invention.

[0048]FIG. 28 is a plan view showing an existing six-chamber typeprocessing apparatus.

DETAILED DESCRIPTION OF THE INVENTION

[0049] (Explanation of Embodiments)

[0050] According to the present invention, since a plurality ofprocessing units are disposed around a transferring chamber, aprocessing apparatus that has a high process speed and a high areaefficiency can be provided. In addition, a processing unit group isdivided into a plurality of processing spaces corresponding toprocessing environments. The processing unit group is connected as oneprocessing apparatus. As a result, a semiconductor device can befabricated with improved process efficiency and high quality.

[0051] According to an implementation mode of the present invention, thefirst processing unit group or the second processing unit group iscomposed of at least one processing unit selected from the groupconsisting of a supercritical cleaning unit, a reactive ion etchingunit, and a spatter etching unit.

[0052] According to an implementation mode of the present invention, thefirst processing unit group or the second processing unit group iscomposed of at least one unit selected from the group consisting of atitanium layer depositing unit, a titanium nitride layer depositingunit, a tungsten layer depositing unit, a tantalum layer depositingunit, a tantalum nitride layer depositing unit, a tungsten nitride layerdepositing unit, a copper layer depositing unit, an alumina layerdepositing unit, a zirconium oxide layer depositing unit, a zirconiumsilicate layer depositing unit, a hafnium oxide layer depositing unit, ahafnium silicate layer depositing unit, an yttrium oxide layerdepositing unit, an yttrium silicate layer depositing unit, a lanthanumoxide layer depositing unit, a lanthanum silicate layer depositing unit,an oxide layer forming unit, a nitride layer forming unit, a manganeselayer depositing unit, a niobium layer depositing unit, an aluminumlayer depositing unit, a molybdenum layer depositing unit, a zirconiumlayer depositing unit, a vanadium layer depositing unit, a cobalt layerdepositing unit, a rhenium layer depositing unit, an iridium layerdepositing unit, a platinum layer depositing unit, a ruthenium oxidelayer depositing unit, and an annealing unit.

[0053] According to an implementation mode of the present invention, thefirst pressure is different from the second pressure.

[0054] According to an implementation mode of the present invention, thefirst processing unit group or the second processing unit group iscomposed of at least one titanium layer depositing unit and at least oneunit selected from the group consisting of a titanium nitride layerdepositing unit, a tantalum nitride layer depositing unit, and atungsten nitride layer depositing unit. The ratio of the number of thetitanium layer depositing unit and the number of the unit selected fromthe group consisting of the titanium nitride layer depositing unit, thetantalum nitride layer depositing unit, and the tungsten nitride layerdepositing unit is 1:1, 1:2, 2:3, or 1:3.

[0055] According to an implementation mode of the present invention, thefirst processing unit group or the second processing unit group iscomposed of at least one tantalum layer depositing unit and at least oneunit selected from the group consisting of a tantalum nitride layerdepositing unit, a titanium nitride layer depositing unit, and atungsten nitride layer depositing unit. The ratio of the number of thetantalum layer depositing unit and the number of the unit selected fromthe group consisting of the tantalum nitride layer depositing unit, thetitanium nitride layer depositing unit, and the tungsten nitride layerdepositing unit is 1:1, 1:2, 1:3, 2:3, 2:1, 3:2, or 3:1.

[0056] According to an implementation mode of the present invention, theprocessing apparatus further comprises a target substrate unloadingportion that is disposed around the second transferring chamber and thatdirectly unloads a target substrate that has been processed.

[0057] According to an implementation mode of the present invention, thefirst transferring arm and/or the second transferring arm has a frog legshape.

[0058] According to an implementation mode of the present invention, theprocessing apparatus further comprises a first load lock chamber thatconnects the first transferring chamber and the substrate containerholding table, and a second load lock chamber that connects the firsttransferring chamber and the second transferring chamber.

[0059] According to an implementation mode of the present invention, thefirst load lock chamber and/or the second load lock chamber alsofunctions as an inspecting module for a target substrate.

[0060] According to an implementation mode of the present invention, atleast one of processing units contained in the first processing unitgroup or the second processing unit group is an inspecting module for atarget substrate.

[0061] According to an implementation mode of the present invention, thetransferring chamber has a plurality of target substrate relayingportions that can be accessed by at least two of the transferring arms.

[0062] According to an implementation mode of the present invention, atleast one of the units is disposed in the vertical direction of anotherunit.

[0063] According to an implementation mode of the present invention, atleast one of the processing units contained in the first processing unitgroup or the second processing unit group comprises a susceptor having atabletop on which a target substrate can be supported and a plurality ofsupporting pins protrusively disposed on the tabletop of the susceptor,the plurality of supporting pins being used for loading and unloading atarget substrate, the center position of the supporting pins deviatingfrom the center position of the susceptor.

[0064] According to an implementation mode of the present invention, thefirst transferring arm and/or the second transferring arm can beexpanded, contracted, and swiveled. The center of the swiveling of thefirst transferring arm and/or the second transferring arm deviates froma front surface of a processing unit that is contained in the firstprocessing unit group/the second processing unit group and that is theclosest to the first transferring arm and/or the second transferringarm.

[0065] According to an implementation mode of the present invention, thefirst transferring arm and/or the second transferring arm can beexpanded, contracted, and swiveled. The first transferring arm and/orthe second transferring arm has a target substrate holding member thatis asymmetrical to the direction in which the first transferring arm/thesecond transferring arm is expanded and contracted.

[0066] According to an implementation mode of the present invention, atleast one of the processing units contained in the first processing unitgroup or the second processing unit group comprises a susceptor having atabletop on which a target substrate can be supported and a plurality ofsupporting pins protrusively disposed on the tabletop of the susceptor,the plurality of supporting pins being used for loading and unloading atarget substrate, and positioned on the tabletop in such a manner thatthe supporting pins do not interfere with the asymmetrical targetsubstrate holding member of the first/the second transferring arm.

[0067] According to an implementation mode of the present invention, thecenter position of the plurality of supporting pins deviates from thecenter position of the susceptor.

[0068] According to an implementation mode of the present invention, theshapes of the target substrate holding members of the first/the secondtransferring arm are nearly same to each other.

[0069] According to an implementation mode of the present invention, thetransferring apparatus further comprises a transferring mechanism thathas a second arm that can be expanded, contracted, and swiveled and asecond target substrate holding member, disposed on the forward end sideof the second arm, wherein a center position of the swiveling of each ofthe arm and the second arm is fixed.

[0070] According to an implementation mode of the present invention, thecenter position of the swiveling of each of the arm and the second armis defined so that a target substrate can be directly transferred by theexpansion and the contraction of the arm and the second arm.

[0071] (First Embodiment)

[0072] Next, with reference to the accompanying drawings, a firstembodiment of the present invention will be explained. FIG. 1 is a planview showing a processing apparatus 1 according to the first embodimentof the present invention. As shown in FIG. 1, in the processingapparatus 1 according to the first embodiment of the present invention,a substrate container holding table 10, a first transferring chamber 30,and a second transferring chamber 50 are disposed. The substratecontainer holding table 10 holds a carrier cassette C as a containerthat can contain a plurality of wafers W (for example, 25 wafers W). Thefirst transferring chamber 30 is disposed on the far side of thesubstrate container holding table 10. The second transferring chamber 50is disposed on the far side of the first transferring chamber 30.

[0073] A first processing unit group 60, 70 is disposed around the firsttransferring chamber 30. A second processing unit group 80, 90, 100,110, 120, 130, 140, and 150 is disposed around the second transferringchamber 50. The first transferring chamber 30 and the holding table 10are connected through first load lock chambers 20, 20. The firsttransferring chamber 30 and the second transferring chamber 50 areconnected through second load lock chambers 40, 40.

[0074] A plurality of carrier cassettes C (for example, four carriercassettes C) can be placed on the holding table 10. A sub arm 21 isdisposed between the holding table 10 and the first load lock chambers20, 20. The sub arm 21 loads and unloads a wafer W to and from a carriercassette C and the first load lock chambers 20, 20.

[0075] A transferring arm 31 is disposed nearly at the center of thefirst transferring chamber 30. The transferring arm 31 has a frog legshape and is called a “frog leg arm”. The “frog leg shape” transferringarm has a total of five sides whose center side is articulated with twosets of two-member arms. One two-member arm is expanded, contracted, androtated (swiveled) along with the opposite two-member arm (see FIGS. 9A,9B, 9C, 10A, 10B, and 10C, which are referred to later.). As shown inFIG. 1, two flag leg arms 31 a, 31 b can be disposed at oppositepositions per transferring arm 31. In this case, one of two members ofeach two-member arm can be shared by each frog leg arm.

[0076] According to the first embodiment of the present invention, thetransferring arm 31 composes a linearly moving and rotating mechanismthat linearly moves and rotates wafer holding members 31 a and 31 bdisposed at the position corresponding to the center one side.Alternatively, two wafer holding members may be disposed on the centerone side of the transferring arm. When two holding members are used,they are disposed back to back with an angle of 180 degrees. With adedicated motor, the two holding members may be reversely rotated.

[0077] In the processing apparatus 1 according to the first embodimentof the present invention, as the first processing unit group,pre-cleaning units 60 and 70 are disposed around the first transferringchamber 30. As the second processing unit group, two CVD units 80 and 90are disposed on the near left side and the near right side of the secondtransferring chamber 50, respectively. In addition, four ALD units 100,110, 120, and 130 are disposed around the second transferring chamber50. The ALD units 100 and 120 and the ALD units 110 and 130 are disposedon the far left side and the far right side of the second transferringchamber 50, respectively. Two CVD units 140 and 150 are disposed on thefarthest left side and the farthest right side of the secondtransferring chamber 50, respectively. The pre-cleaning units areexisting cleaning units that are for example supercritical cleaningunits using a supercritical fluid, reactive ion etching units that cleanan object using a reactive gas, and spatter etching units thatphysically clean an object by a spattering etching method.

[0078] In the second transferring chamber 50, second transferring arms41, 42, and 43 are disposed. A wafer W may be transferred betweenadjacent arms of the second transferring arms 41, 42, and 43.Alternatively, a wafer W may be transferred through at least onetransferring portion (not shown: target substrate relaying portions thatcan be accessed by at least two transferring arms) disposed in thesecond transferring chamber 50.

[0079] The two CVD units 80 and 90 disposed on the nearest side of thesecond processing unit group are CVD units that deposit a titan (Ti)layer on a wafer W. The four ALD units 100 to 130 disposed on thefarther side of the second processing unit group are ALD units thatdeposit a titanium nitride (TiN) layer on a wafer W. The CVD units 140and 150 disposed on the farthest side of the second processing unitgroup are CVD units that deposit a tungsten (W) layer on a wafer W. ALDstands for Atomic Layer Deposition. A titanium layer, a titaniumnitride, and a tungsten layer may be deposited by spattering units.

[0080] An inspecting module that inspects each or some of the filmquality, film thickness, particles, and dimensions may be disposed as apart of the processing unit groups. Alternatively, a processing unitthat is equipped with a mechanism that performs such inspections may bedisposed. In addition, an inspecting module may be disposed in the loadlock chamber 20 or 40.

[0081] Instead of a part of processing units of the second processingunit group, a load lock chamber may be disposed. A substratetransferring unit including the substrate container holding table 10 maybe connected to the load lock chamber. In this case, a substrate thathas been processed may be directly unloaded from the transferringchamber 50.

[0082]FIG. 2 is a vertical sectional view showing the pre-cleaning unit60 according to the first embodiment of the present invention. Thepre-cleaning unit 60 according to the first embodiment of the presentinvention is a unit that cleans the front surface of a target substratesuch as a wafer W with supercritical carbon dioxide. In the pre-cleaningunit 60, an inlet portion 603 is disposed. The inlet portion 603 inletssupercritical carbon dioxide to the interior of an air-tight andbox-shaped processing chamber 601. Carbon dioxide is inlet from a carbondioxide source 604. A compressor 607 compresses carbon dioxide. A heatexchanger 608 heats carbon dioxide. Thus, the compressor 607 and theheat exchanger 608 produce supercritical carbon dioxide. Supercriticalcarbon dioxide is supplied to the processing chamber 601 through theinlet portion 603. Supercritical carbon dioxide cleans the front surfaceof a wafer W placed on a susceptor 602. Carbon dioxide supplied to theprocessing chamber 601 is exhausted from an exhaust opening 606 alongwith a side product generated by the cleaning reaction.

[0083] As shown in FIG. 2, an opening portion 601 a is formed in thewall of the processing chamber 601. The opening portion 601 a isdisposed on the right of the susceptor 602 in FIG. 2. The openingportion 601 a is opened and closed by moving a gate valve 605 upward anddownward. In FIG. 2, a first transferring arm (not shown) is disposed onthe right of the gate valve 605. The first transferring arm is operatedto access the processing chamber 601 through the opening portion 601 a,load a wafer W to the processing chamber 601, place the wafer W on thesusceptor 602, and unload the processed wafer W from the processingchamber 601.

[0084]FIG. 3 is a vertical sectional view showing the CVD unit 80according to the first embodiment of the present invention. As shown inFIG. 3, a processing chamber 801 of the CVD unit 80 is air-tightlystructured with for example aluminum wall. The processing chamber 801has a heating mechanism and a cooling mechanism (not shown). A gas inletpipe 802 is connected to an upper center portion of the processingchamber 801. The gas inlet pipe 802 inlets gas to the processing chamber801. The processing chamber 801 and the gas inlet pipe 802 areconnected. The gas inlet pipe 802 is connected to a gas supply source803. Gas is supplied from the gas supply source 803 to the gas inletpipe 802. The gas is supplied to the processing chamber 801 through thegas inlet pipe 802. The gas is a material of a thin film. Whennecessary, an inertia gas is used as a carrier gas.

[0085] A gas exhaust pipe 804 is connected to a lower portion of theprocessing chamber 801. The gas exhaust pipe 804 exhausts gas from theprocessing chamber 801. The gas exhaust pipe 804 is connected to anexhausting unit (not shown). The exhausting unit is for example a vacuumpump. The exhausting unit exhausts the gas from the processing chamber801 through the gas exhaust pipe 804. The processing chamber 801 is keptat a desired pressure. A susceptor 805 is disposed at a lower portion ofthe processing chamber 801. The susceptor 805 holds a wafer W. Accordingto the first embodiment of the present invention, a wafer W is placed onthe susceptor 805 by a static chuck (not shown) whose diameter is nearlythe same as that of the wafer W. A heating source unit (not shown) isdisposed in the susceptor 805. The heating source unit allows theprocess surface of a wafer W placed on the susceptor 805 to be adjustedat a desired temperature.

[0086] As shown in FIG. 3, an opening portion 801 a is formed in thewall of the processing chamber 801. The opening portion 801 a isdisposed on the right of the susceptor 805 in FIG. 3. A wafer W isloaded and unloaded through the opening portion 801 a. The openingportion 801 a is opened and closed by moving a gate valve 806 upward anddownward. In FIG. 3, a second transferring arm (not shown) is disposedon the right of the gate valve 806. The second transferring arm isoperated to access the processing chamber 801 through the openingportion 801 a, load a wafer W to the processing chamber 801, place thewafer W on the susceptor 805, and unload the processed wafer W from theprocessing chamber 801. A shower head 807 as a shower member is disposedabove the susceptor 805. The shower head 807 is disposed between thesusceptor 805 and the gas inlet pipe 802 to divide the inner space ofthe processing chamber 801. The shower head 807 is made of for examplealuminum.

[0087] A gas introducing opening 802 a of the gas inlet pipe 802 isplaced at an upper center portion of the shower head 807. A gas suppliedto the processing chamber 801 is directly supplied to the shower head807 disposed in the processing chamber 801.

[0088] In the forgoing example, as excitation energy of the CVDreaction, heat is used. Alternatively, as excitation energy, plasmadischarging may be used.

[0089]FIG. 4 is a vertical sectional view showing the ALD unit 100according to the first embodiment of the present invention. Thestructure of the ALD unit 100 is nearly the same as the structure of theforgoing CVD unit except that the shower unit is removed from the CVDunit and thereby the volume of the chamber is decreased. Moreover, theALD unit 100 deposits a film in an atomic level one layer by one layerby repeatedly supplying a pulsated process gas to a processing chamberand exhausting it therefrom.

[0090] Next, steps for the processing apparatus 1 according to the firstembodiment of the present invention to fabricate a semiconductor devicewill be explained. FIG. 5 is a flow chart for which the processingapparatus 1 according to the first embodiment of the present inventionfabricates a semiconductor device. FIGS. 6A, 6B, 6C, 6D, and 6E arevertical sectional views showing a semiconductor device fabricated bythe processing apparatus 1.

[0091] First of all, a carrier cassette C that contains 25 untreatedwafers W is placed on the holding table 10. Thereafter, the processingapparatus 1 is activated. The sub arm 21 is operated to access thecarrier cassette C, take out a untreated wafer W therefrom, and placethe wafer W in the first load lock chamber 20. Thereafter, the gatevalve (not shown) disposed on the holding table 10 side is closed in thefirst load lock chamber 20. Thereafter, the inner pressure of the firstload lock chamber 20 is raised until the inner pressure nearly becomesthe same as the inner pressure of the first transferring chamber 30.Thereafter, the gate valve (not shown) disposed on the transferringchamber side is opened in the first load lock chamber 20 is opened. Thetransferring arm 31 is operated to access the first load lock chamber20, take out the wafer W therefrom, and load it to the pre-cleaning unit(supercritical cleaning unit) 60. As shown in FIG. 6A, before a wafer Wis pre-cleaned, an insulation layer 12 (for example, a SiO₂ layer) hasbeen formed with a predetermined pattern on the upper surface of a basematerial 11. The entire surface of the wafer W on which the insulationlayer 12 has been formed is covered with a natural oxide film 13.

[0092] The gate valve 605 of the pre-cleaning unit 60 is air-tightlyclosed. Thereafter, the wafer W is heated and pressured in thepre-cleaning unit 60. After a predetermined state has taken place,supercritical carbon dioxide (CO₂) is supplied to the pre-cleaning unit60.

[0093] Supercritical carbon dioxide dissolves the natural oxide film 13formed on the entire surface of the wafer W (see FIG. 6B). At thatpoint, an oxide film resides on the front surface 11 a of the basematerial 11 exposed to the front surface of the wafer W through anopening portion 12 a of the insulation layer 12.

[0094] Thereafter, the supply of carbon dioxide to the pre-cleaning unit60 is stopped. The transferring arm 31 is operated to access thepre-cleaning unit 60 and take out the wafer W that has been pre-cleanedtherefrom. Thereafter, the gate valve (not shown) disposed on the firsttransferring chamber side is opened in the second load lock chamber 40.The transferring arm 31 loads the wafer W to the second load lockchamber 40. In the state, all the gate valves of the second load lockchamber 40 are air-tightly closed. The inner pressure of the second loadlock chamber 40 is lowered so that the inner pressure nearly becomes thesame as the inner pressure of the second transferring chamber 50.Thereafter, the gate valve disposed on the second transferring chamberside is opened in the second load lock chamber 40. The secondtransferring arm 41 is operated to access the second load lock chamber40, take out the wafer W therefrom, and load the wafer W to the CVD unit80 that deposits titanium layer. In the state, the gate valve 806 of theCVD unit 80 is air-tightly closed. Under predetermined temperature andpressure conditions, a titanium (Ti) layer is deposited on the wafer W.

[0095] By the reducing operation of titanium (Ti), a residual oxide filmadhered on the base material 11 exposed to the wafer W is removed on thefront surface of the wafer W. As a result, the front surface of the basematerial is exposed. When the titanium (Ti) layer depositing step iscontinued, as shown in FIG. 6C, a titanium (Ti) layer 14 is deposited onthe front surface 11 a of the exposed base material 11. As a result, theelectric characteristic of the front surface of the base material isimproved.

[0096] After the predetermined titanium (Ti) layer 14 has beendeposited, the supply of the titanium layer deposition gas is stopped.Thereafter, the gate valve 806 is opened. The second transferring arm 41is operated to access the CVD unit 80, take out the wafer W therefrom,and transfer the wafer W to the second transferring arm 42 disposed atthe center of the second transferring chamber 50. The secondtransferring arm 42 loads the wafer W to one of the ALD units 100 to 130disposed on the far side of the second transferring chamber 50. Forexample, the second transferring arm 42 loads the wafer W to the ALDunit 100. In the same manner as the forgoing CVD process, underpredetermined conditions, a process gas is supplied to the ALD unit 100.As a result, as shown in FIG. 6D, a titanium nitride (TiN) layer 15 isdeposited on the titanium (Ti) layer 14 as the top layer of the wafer W(at step 3).

[0097] After the titanium nitride (TiN) layer 15 has been deposited, thesupply of the titanium nitride layer deposition gas is stopped.Thereafter, the gate valve 1006 is opened. The second transferring arm42 is operated to access the ALD unit 100, take out the wafer Wtherefrom, and transfer it to the second transferring arm 43 on thefarthest side. The second transferring arm 43 is operated to load thewafer W to the CVD unit 140 or 150 (for example, the CVD unit 140)disposed on the farthest side. As with the forgoing CVD process, underpredetermined conditions, a process gas is supplied to the CVD unit 140.As a result, tungsten (W) is deposited on the front surface of thetitanium nitride (TiN) layer 15 as the top layer of the wafer W. Thus,as shown in FIG. 6E, a tungsten (W) layer 16 is deposited on the frontsurface of the wafer W (at step 4).

[0098] After the steps for which the natural oxide film 13 is removedand the tungsten (W) layer 16 is deposited have been completed, thewafer W is returned to the carrier cassette C through the secondtransferring arms 43 to 41, the second load lock chamber 40, the firsttransferring chamber 30, and the first load lock chamber 20.

[0099] In the processing apparatus 1 according to the first embodimentof the present invention, processing unit groups that are operated underdifferent process pressures are connected through a load lock chamber.Thus, a wafer W can be successively processed, without being exposed toouter air, from a cleaning process performed under a high pressurecondition to a film depositing process performed under a low pressurecondition. Thus, a wafer W can be processed at high speed and afabricating cost becomes low.

[0100] Particularly, in the processing apparatus 1 according to thefirst embodiment of the present invention, since four processing units100, 110, 120, and 130 of eight processing units that compose the secondprocessing unit group are used as ALD units that deposit a titaniumnitride (TiN) layer, the total process speed does not depend on theprocess time of the ALD units whose process speed is lower than the CVDunits. In other words, when a plurality of wafers W are successivelyprocessed and the CVD process is followed by the ALD process, wafers Wfor which the CVD process has been performed are processed by two ALDunits. As a result, the total process time does not depend on theprocess time of the ALD units that take a long process time. Thus, thetotal process time of the second processing unit group can be shortened.

[0101] In addition, it is not necessary to take out a wafer W from theprocessing apparatus in the middle of a film depositing process. Thus, afilm that is being deposited can be prevented from being oxidized ordeteriorated. As a result, a film can be deposited in high quality.Experimental results show that the area efficiency and process speed ofthe processing apparatus according to the first embodiment of thepresent invention are superior to those of an existing processingapparatus by 25% and 50%, respectively as shown in graphs of FIGS. 7 and8.

[0102] Next, the transferring arm 41 (42, 43, 31) as a transferring unitwill be further explained. FIG. 9A is a plan view showing an example ofthe structure of the transferring arm 41. As shown in FIG. 9A, thetransferring arm 41 has a rotating center member 401, arms 402 and 403,arms 404 and 405, and a wafer supporting member (wafer holding member)406. First end portions of the arms 402 and 403 are supported at thecenter of the rotating center member 401 so that the arms 402 and 403are horizontally rotatable. First end portions of the arms 404 and 405are connected to and supported by second end portions of the arms 402and 403, respectively, so that the arms 404 and 405 are horizontallyrotatable. The wafer supporting member 406 is pivoted by second endportions of the arms 404 and 405. When necessary, the arms 402 and 403are rotated about a portion pivoted by the rotating center member 401(hereinafter, this portion is simply called “the center”).

[0103] A second set of arms (equivalent the arms 404 and 405) and awafer supporting member (equivalent to the wafer supporting member 406)may be disposed at an outer end portion of the arms 402 and 403 from thecenter so that the two sets are disposed back to back as shown in FIG.1.

[0104]FIG. 9B shows the case that the arms 402 and 403 shown in FIG. 9Aapproach to each other on the upper side. Thus, as shown in FIG. 9B, thearms 404 and 405 protrude from the center. As a result, the wafersupporting member 406 connected to the second end portions of the arms404 and 405 moves in the radial direction. FIG. 9C shows the case thatthe arms 402 and 403 shown in FIG. 9A are rotated so that they approachto each other on the lower side. As a result, the arms 404 and 405approach to the center as shown in FIG. 9C. Thus, the wafer supportingmember 406 connected to the second end portions of the arms 404 and 405approaches to the center.

[0105] Thus, it is clear that as the arm 402 and the arm 403 aresymmetrically rotated, the wafer supporting member 406 are linearlymoved from the center of the rotating center member 401 in the radialdirection.

[0106]FIG. 10A shows the case that the arms 402 and 403 shown in FIG. 9Aare rotated in the same direction (in the right rotating direction) asdenoted by a dot-dash line. FIG. 10B shows the case that the arms 402and 403 shown in FIG. 9B are rotated in the same direction (in the rightrotating direction) as denoted by a dot-dash line. FIG. 10C shows thecase that the arms 402 and 403 shown in FIG. 9C are rotated in the samedirection (in the right rotating direction) as denoted by a dot-dashline.

[0107] Thus, it is clear that as the arms 402 and 403 are rotated in thesame direction, the wafer supporting member 406 is rotated (swiveled)about the rotating center member 401. In addition, it is clear thatFIGS. 9A, 9B, and 9C and FIGS. 10A, 10B, and 10C show that the swivelingand the linear movement in the radial direction can be independentlyperformed.

[0108] As shown in FIGS. 9A to 9C and 10A to 10C, the wafer supportingmember 406 has a “U” letter shape plane. As a result, when a wafer W isloaded to a processing unit and unloaded therefrom, the wafer supportingmember 406 can be prevented from interfering with vertically movablesupporting pins that are protrusively disposed in the wafer susceptor.

[0109]FIG. 11 is a schematic diagram for explaining an example oftransferring operations for a wafer by transferring arms. In FIG. 11, afirst transferring arm is denoted by a suffix “a”, whereas a secondtransferring arm is denoted by a suffix “b”.

[0110] As shown in FIG. 11, when the first transferring arm is operatedto transfer a wafer 407 to an adjacent transferring arm (namely, thesecond transferring arm), the orientations of the transferring arms areinclined so that the wafer supporting member 406 a does not contact withthe wafer supporting member 406 b. When a transferring arm that receivesthe wafer 407 is moved upward, the wafer 407 is transferred thereto froma transferring arm that supports the wafer 407. As a result, thetransferring operation for the wafer 407 can be completed without aninterference of the transferring arms. When the wafer 407 is transferredwithout an inclination of the transferring arms, the wafer supportingmember 406 a contacts with the wafer supporting member 406 b. This isbecause the shapes of the transferring arms are the same and each ishorizontally symmetrical.

[0111] In the forgoing description, “the orientations of thetransferring arms are inclined” is exemplified. Alternatively, when theorientation of at least one of the transferring arms is inclined againstthe orientation of the other transferring arm, the wafer 407 can betransferred from one transferring arm to another transferring armwithout an interference thereof.

[0112]FIGS. 12A, 12B, and 12C are schematic diagrams for explaining therelation between a transferring arm and a processing unit. As wasdescribed with reference to FIG. 11, when the wafer 407 is transferredfrom one transferring arm to another transferring arm without aninterference thereof, it is inevitable that the support position of thewafer 407 by transferring arms is asymmetrical (See FIG. 11). Thus, itis necessary to load the wafer 407 that is asymmetrically supported to aprocessing unit and unload it therefrom without a problem. In this case,there is a problem with respect to the relation between the position ofthe wafer supporting member and the positions of supporting pins thatare protrusively disposed in the susceptor of a processing unit.

[0113]FIG. 12A shows the case that supporting pins 409 a that are usedto lift a wafer and that are disposed in a susceptor 408 are positionednear a center portion of the susceptor 408 so that the supporting pins409 a do not interfere with the wafer supporting member 406. In thiscase, the support position of the wafer supporting member 406 isasymmetrical to the wafer 407, the wafer supporting member 406 does notinterfere with the supporting pins 409 a. In addition, the supportingpins 409 a can vertically move the wafer 407 without a problem.

[0114]FIG. 12B shows the case that supporting pins 409 b that are usedto lift a wafer and that are disposed in the susceptor 408 of aprocessing unit are positioned at a non-center portion (a deviatingposition from the center) of the suscepter 408 so that the supportingpins 409 b do not interfere with the wafer supporting member 406. Inthis case, the wafer supporting member 406 does not interfere with thesupporting pins 409 b. In addition, the supporting pins 409 b canvertically move the wafer 407 without a problem.

[0115]FIG. 12C shows the case that supporting pins 409 c that are usedto lift a wafer and that are disposed in the suscepter 408 of aprocessing unit are positioned at a peripheral portion of the susceptor408 so that the supporting pins 409 c do not interfere with the wafersupporting member 406. In this case, the wafer supporting member 406does not interfere with the supporting pins 409 c. In addition, thesupporting pins 409 c can vertically move the wafer 407 without aproblem.

[0116]FIGS. 13A, 13B, and 13C show the cases that the position of aprocessing unit (thus, the position of a susceptor 408A) is changed alength for which the wafer supporting member 406 is asymmetrical to thewafer 407 (thus, the orientation of the transferring arm that accesses aprocessing unit is nearly perpendicular thereto), corresponding to FIGS.12A, 12B, and 12C, respectively. When a processing unit is disposed insuch a manner, the wafer 407 can be loaded thereto and unloadedtherefrom without need to consider the asymmetricalness between thewafer 407 and the wafer supporting member 406.

[0117]FIG. 14 is a schematic diagram for explaining another example of atransferring operation for a wafer by transferring arms. In FIG. 14, afirst transferring arm is denoted by a suffix “a”, whereas a secondtransferring arm is denoted by a suffix “b”.

[0118] As shown in FIG. 14, the shape of a wafer supporting member 406Aaof the first transferring arm and the shape of a wafer supporting member406Ab of the second transferring arm are asymmetrical to the directionin which the first transferring arm/the second transferring arm isexpanded and contracted. With the wafer supporting members 406Aa and406Ab, when the first transferring arm is straightly approached to thesecond transferring arm, they can be prevented from contacting as shownin FIG. 14. When a transferring arm that receives a wafer 407 is movedupward, the wafer 407 is transferred thereto from a transferring armthat supports the wafer 407. Thus, the transferring operations for thewafer 407 by the two transferring arms can be completed without aninterference thereof. In this case, the shape of the first transferringarm is the same as the shape of an adjacent transferring arm (secondtransferring arm). However, when the first transferring arm and thesecond transferring arm are horizontally asymmetrical, the first andsecond transferring arms can be prevented from interfering.

[0119] To prevent transferring arms that transfer the wafer 407 frominterfering, it is possible to form them in different shapes. Forexample, one transferring arm may be formed in a “U” letter shape,whereas the other transferring arm may be formed in a “W” letter shape.In this case, the “U” letter shape wafer supporting member does notinterfere with the “W” letter shape wafer supporting member since “U”letter and “W” letter are complementary to each other as a letter shape.

[0120] When the shapes of adjacent transferring arms are different andat least one of them is horizontally asymmetrical, they can be preventedfrom interfering. For example, when the shape of one transferring arm ishorizontally symmetrical (for example, the shape as shown in FIGS. 9A,9B, and 9C) and the shape of the other transferring arm is asymmetricalwith respect to the center line, the transferring arms can be preventedfrom interfering.

[0121]FIGS. 15A, 15B, and 15C are schematic diagrams for explaining therelation between the transferring arms shown in FIG. 14 and a processingunit. As shown in FIG. 14, when a wafer supporting member 406A having ashape that prevents transferring arms from interfering is used, there isa problem with respect to the relation between the positions ofsupporting pins that are protrusively disposed in the susceptor of aprocessing unit and the position of the wafer supporting member 406A.This is because the support position of the wafer supporting member 406Ais asymmetrical to the wafer 407 as shown in FIG. 14.

[0122]FIG. 15A shows the case that supporting pins 409 a that aredisposed in the susceptor 408 of a processing unit and that are used tolift a wafer are positioned near a center portion of the susceptor 408so that the supporting pins 409 a do not interfere with the wafersupporting member 406A. As a result, even if the supporting portion ofthe wafer supporting member 406A is asymmetrical to the wafer 407, thewafer supporting member 406A does not interfere with the supporting pins409 a. In addition, the supporting pins 409 a can vertically move thewafer 407 without a problem.

[0123]FIG. 15B shows the case that supporting pins 409 b that aredisposed in the susceptor 408 of a processing unit and that are used tolift a wafer are positioned at a non-center portion (a deviatingposition from the center) of the susceptor 408 so that the supportingpins 409 b do not interfere with the wafer supporting member 406A. Inthis case, the wafer supporting member 406A does not interfere with thesupporting pins 409 b. In addition, the supporting pins 409 b canvertically move the wafer 407 without a problem.

[0124]FIG. 15C shows the case that supporting pins 409 c that aredisposed in the susceptor 408 of a processing unit and that are used tolift a wafer are positioned at a peripheral portion of the susceptor 408so that the supporting pins 409 c do not interfere with the wafersupporting member 406A. In this case, the wafer supporting member 406Adoes not interfere with the supporting pins 409 c. In addition, thesupporting pins 409 c can vertically move the wafer 407 without aproblem.

[0125] In the forgoing, an example whose transferring operations for awafer are performed by transferring arms has been explained. Of course,as an existing method, a wafer may be indirectly transferred from onetransferring arm to an adjacent transferring arm through a relayingtable (since its shape is not limited to a tabletop, it is a targetsubstrate relaying portion).

[0126] (Second Embodiment)

[0127] Next, a second embodiment of the present invention will beexplained. FIG. 16 is a plan view showing a processing apparatus 2according to the second embodiment of the present invention. As shown inFIG. 16, the processing apparatus 2 according to the second embodimentof the present invention has a substrate container holding table 10, afirst transferring chamber 30, and a second transferring chamber 50. Thesubstrate container holding table 10 holds a carrier cassette C thatcontains wafers W. The first transferring chamber 30 is disposed on thefar side of the holding table 10. The second transferring chamber 50 isdisposed on the far side of the first transferring chamber 30.

[0128] A first processing unit group is disposed around the firsttransferring chamber 30. The first processing unit group is composed oftwo pre-cleaning units 160 and 170 and two CVD units 180 and 190. Thepre-cleaning units 160 and 170 are disposed on the left and right of thefirst transferring chamber 30, respectively. The two CVD units 180 and190 are disposed on the far left side and far right side of thepre-cleaning units 160 and 170, respectively. The pre-cleaning units 160and 170 are reactive clean units that are operated under a low vacuumenvironment. The CVD units 180 and 190 are CVD units that deposit atantalum nitride (TaN) layer.

[0129] A second processing unit group is disposed around the secondtransferring chamber 50. The second processing unit group is composed ofonly spattering units. Two spattering units 200 and 210 are disposed onthe near side of the second transferring chamber 50. The spatteringunits 200 and 210 deposit a tantalum (Ta) layer. Two spattering units220 and 230 are disposed on the far side of the second transferringchamber 50. The spattering units 220 and 230 deposit a copper (Cu)layer. The four spattering units 200, 210, 220, and 230 are processingunits that are operated under a high vacuum environment.

[0130]FIG. 17 is a vertical sectional view showing the pre-cleaning unit160 according to the second embodiment of the present invention. Thepre-cleaning unit 160 according to the second embodiment of the presentinvention is a reactive clean unit. The pre-cleaning unit 160 cleans thefront surface of a target substrate with a cleaning gas.

[0131] A cleaning gas such as hydrogen gas (H₂) or a gas containinghalogen (NF₃) is supplied from a gas supplying source 1604 to aprocessing chamber 1601. The cleaning gas is excited and activated by anupper electrode 1603. The front surface of a target substrate such as awafer W placed on a susceptor 1602 is cleaned by a chemical reaction. InFIG. 17, the upper electrode 1603 that produces plasma is disposed inthe processing chamber 1601. Alternatively, a coil may be disposedoutside the processing chamber 1601. An exciting and activating seed (aradical) may be supplied from the outside of the processing chamber.Alternatively, with a lower electrode, an exciting and activating seedmay be attracted to a target substrate. Alternatively, a lower electrodemay not be disposed so as to alleviate a damage of the target substrate.The numeral 1606 is a gate valve for loading and unloading the wafer W.

[0132]FIG. 18 is a vertical sectional view showing the spattering unit200 according to the second embodiment of the present invention. Asshown in FIG. 18, a processing chamber 2001 of the spattering unit 200is air-tightly structured. With a discharging gas supplied to theprocessing chamber 2001, the interior thereof can be maintained in ahigh vacuum environment.

[0133] A substrate holder 2002 is disposed at a center bottom portion ofthe processing chamber 2001. A wafer W is placed on the substrate holder2002. On the substrate holder 2002, the wafer W is processed. A target2003 is held through an electrode 2004 so that the target 2003 faces thesubstrate holder 2002. A discharging gas is excited at a voltage appliedby the electrode 2004 under a high vacuum environment. Excited positiveions collide with the front surface of the target. The target 2003 givesoff atoms. The atoms deposit on the front surface of the wafer W. As aresult, a layer of a desired material is formed on the front surface ofthe wafer W. The numeral 2005 is a gate valve for loading and unloadingthe wafer W.

[0134] According to the second embodiment of the present invention, thespattering units 200 and 210 that deposit a tantalum (Ta) layer usingtantalum (Ta) as a target and the spattering units 220 and 230 thatdeposit a copper (Cu) layer using copper (Cu) as a target are disposedas the second processing units.

[0135] Next, steps for which the processing apparatus 2 according to thesecond embodiment of the present invention fabricates a semiconductordevice will be explained. FIG. 19 is a flow chart for which theprocessing apparatus 2 according to the second embodiment of the presentinvention fabricates a semiconductor device. FIGS. 20A, 20B, 20C, 20D,and 20E are vertical sectional views showing states of a semiconductordevice which is being fabricated by the processing apparatus 2.

[0136] First of all, a carrier cassette C that contains a plurality ofuntreated wafers W is placed on the substrate container holding table10. Thereafter, the processing apparatus 2 is activated. The sub arm 21is operated to access the carrier cassette C, take out a untreated waferW therefrom, and load the wafer W to the first load lock chamber 20.Thereafter, a gate value (not shown) disposed on the holding table sideis closed in the first load lock chamber 20. Thereafter, the innerpressure of the first load lock chamber 20 is lowered so that the innerpressure nearly becomes the same as the inner pressure of the firsttransferring chamber 30. Thereafter, a gate valve disposed on thetransferring chamber side is opened in the first load lock chamber 20.

[0137] The transferring arm 31 is operated to access the first load lockchamber 20, take out the wafer W therefrom, and load it to thepre-cleaning unit (reactive clean unit) 160. As shown in FIG. 20A, awafer W that has not been pre-cleaned is composed of a copper (Cu) basewiring layer 11A and an insulation layer 12A formed on the upper surfacethereof. On the insulation layer 12A, for example an SiO₂ layer has beenformed in a predetermined pattern shape. The entire surface of the waferW on which the insulation layer 12A is formed is coated with a naturaloxide film 13A.

[0138] The gate value 1606 of the pre-cleaning unit 160 is air-tightlyclosed. After a predetermined pressure and a predetermined temperaturehave been obtained, a cleaning gas is supplied. The cleaning gas thathas been excited and activated by a radio frequency power source or thelike is chemically reacted with a natural oxide film 13A on the frontsurface of the wafer W. As shown in FIG. 20B, the natural oxide film 13Athat coats the entire front surface of the wafer W is removed (at step1). Alternatively, when a spatter etching process is performed, apredetermined pressure and a predetermined temperature are maintained.As a result, a process gas in the pre-cleaning unit 160 collides withthe front surface of the wafer W placed on the susceptor. Consequently,the front surface of the wafer W is cleaned. At that point, molecules ofthe process gas collide with the front surface of the wafer W. As shownin FIG. 20B, the natural oxide film 13A that coats the entire surface ofthe wafer W is removed.

[0139] Thereafter, the supply of the cleaning gas to the pre-cleaningunit 160 is stopped. The gate value 1606 of the pre-cleaning unit 160 isopened. The transferring arm 31 is operated to access the pre-cleaningunit 160, take out the wafer W therefrom, transfer the wafer W to thefirst transferring arm 32 disposed on the far side. At that point, thewafer W may be directly transferred from the transferring arm 31 to thefirst transferring arm 32. Alternatively, the wafer W may be transferredfrom the transferring arm 31 to the first transferring arm 32 through atleast one transferring portion (relaying table) disposed in the firsttransferring chamber 30.

[0140] Thereafter, the first transferring arm 32 is operated to accessthe CVD unit or ALD unit 180 on the far side of the pre-cleaning unit160 and place the wafer W on the susceptor. Thereafter, the gate valveof the CVD unit or the ALD unit is closed. Under predeterminedconditions, a process gas is supplied. A predetermined material layer (atantalum nitride (TaN) layer 14A according to the second embodiment) isdeposited on the front surface of the wafer W (at step 2). At step 2, asshown in FIG. 20C, the tantalum nitride (TaN) layer 14A is deposited onthe front surface of the wafer W.

[0141] Thereafter, the gate value of the CVD unit or the ALD unit isopened. The first transferring arm 32 is operated to access the CVD unitor the ALD unit 180 and take out the wafer W, on which the tantalumnitride (TaN) layer 14A has been deposited, therefrom. Thereafter, agate value (not shown) disposed on the first transferring chamber sideis opened in the second load lock chamber 40. The wafer W is placed inthe second load lock chamber 40. In this state, the gate value disposedon the first transferring chamber side is air-tightly closed in thesecond load lock chamber 40. Thereafter, the inner pressure of thesecond load lock chamber 40 is lowered so that the inner pressure nearlybecomes the same as the inner pressure of the second transferringchamber 50.

[0142] Thereafter, the gate value disposed on the second transferringchamber side is opened in the second load lock chamber 40. Thetransferring arm 41 is operated to access the second load lock chamber40, take out the wafer W therefrom, and load it to the spattering unit200 that deposits a tantalum (Ta) layer. In the state, the gate value2005 of the spattering unit 200 is air-tightly closed. Underpredetermined temperature and pressure conditions, a tantalum (Ta) layer15A is deposited on the front surface of the wafer W (at step 3). Atthat point, the tantalum (Ta) layer 15A is deposited on the frontsurface of the tantalum nitride (TaN) layer 14A of the wafer W (see FIG.20D). As a result, the adhesiveness and wetness of a seed layer 16A fora copper layer that is a wiring layer that will be deposited next areimproved.

[0143] After the predetermined tantalum (Ta) layer 15A has beendeposited, the supplies of the process gas and the voltage are stopped.The gate valve 2005 of the spattering unit 200 is opened. Thetransferring arm 41 is operated to access the spattering unit 200, takeout the wafer W therefrom, and load it to the spattering unit 220 thatis disposed on the far side and that deposits a copper (Cu) layer.

[0144] When the process gas and voltage are supplied under predeterminedconditions in the same manner as those of the spattering unit 200,copper is deposited on the tantalum (Ta) layer 15A as the top layer ofthe wafer W. As shown in FIG. 20E, a copper (Cu) layer 16A is depositedas a seed layer on the front surface of the wafer W (at step 4). Afterthe step that the natural oxide film 13A is removed to the step thecopper (Cu) layer 16A is deposited have been completed, the wafer W isreturned to the carrier cassette C through the second transferring arm41, the second load lock chamber 40, the first transferring chamber 30,the first transferring arm 32, the transferring arm 31, and the firstload lock chamber 20.

[0145] In the processing apparatus 2 according to the second embodimentof the present invention, since processing unit groups whose processpressures are different are connected through a load lock chamber, awafer W can be successively processed, without being exposed to outerair, from a film depositing process performed in a low vacuumenvironment to a film depositing process performed in a high vacuumenvironment. Thus, the process speed can be increased and thefabrication cost can be reduced.

[0146] In addition, since it is not necessary to take out a wafer W thatis being processed from the processing apparatus 2, a film can bedeposited in a high quality without oxidation and deterioration thereof.

[0147] (Third Embodiment)

[0148]FIG. 21 is a plan view showing an outlined structure of aprocessing apparatus 3 according to a third embodiment of the presentinvention. According to the third embodiment, reactive ion etching units61 and 71 are used instead of supercritical cleaning units used as thepre-cleaning units 60 and 70 of the processing apparatus 1 according tothe first embodiment of the present invention. The reactive ion etchingunits 61 and 71 clean a wafer with a process gas. The reactive ionetching units 61 and 71 are disposed around a transferring chamber 30Atogether with CVD units 80, 90, 140, and 150 and ALD units 100, 110,120, and 130 that are used in the next process.

[0149] Since the reactive ion etching units 61 and 71 are used in areduced pressure environment, such units can be laid out. In theprocessing apparatus according to the third embodiment of the presentinvention, since many processing units are disposed around thetransferring chamber 30A, the processing apparatus having a higher areaefficiency can be accomplished.

[0150] (Fourth Embodiment)

[0151]FIG. 22 is a plan view showing an outlined structure of aprocessing apparatus 4 according to a fourth embodiment of the presentinvention. In the processing apparatus 4 according to the fourthembodiment of the present invention, the forgoing processing units arecombined so that steps shown in a flow chart of FIG. 23 are successivelyperformed. FIGS. 24A, 24B, 24C, 24D, 24E, 24F, 25A, and 25B are verticalsectional views showing states of a wafer W at steps of the flow chartshown in FIG. 23.

[0152] When the process is performed by the processing apparatusaccording to the fourth embodiment of the present invention, a untreatedwafer W is loaded to the pre-cleaning unit 240. In this state, as shownin FIG. 24A, a natural oxide film 13B has been formed on the frontsurface of the wafer W. When a pre-cleaning process is performed in thepre-cleaning unit 240 (at step 1), the natural oxide film 13B is removedfrom the front surface of the wafer W as shown in FIG. 24B.

[0153] Thereafter, the wafer W is loaded to an annealing unit 250 (atstep 2). The annealing unit 250 performs an annealing step for the waferW as a heating step proceeded by the pre-cleaning step. At the heatingstep, a residue 19B such as fluoride is removed (see FIG. 24C).Thereafter, the wafer W that has been annealed is unloaded from theannealing unit 250 and then loaded to an interface oxide film formingunit 260. In the interface oxide film forming unit 260, an interfaceoxide film 14B is formed (at step 3, FIG. 24D). The interface oxide film14B allows the electric characteristic of the interface of the wafer Wto be improved.

[0154] Thereafter, the wafer W on which the interface oxide film 14B hasbeen formed is unloaded from the interface oxide film forming unit 260and then loaded to a nitride film forming unit 270. In the nitride filmforming unit 270, the front surface of the interface oxide film 14B isnitrided. As a result, a nitride film 15B is formed on the front surfaceof the wafer W (at step 4, FIG. 24E). The nitride film 15B is a barrierlayer formed between upper and lower layers. Thereafter, the wafer W onwhich the nitride film 15B has been formed is unloaded from the nitridefilm forming unit 270 and then loaded to a gate insulation filmdepositing unit 280.

[0155] Examples of the gate insulation film depositing unit 280 are analumina layer depositing unit, a zirconium oxide layer depositing unit,zirconium silicate layer depositing unit, a hafnium oxide layerdepositing unit, a hafnium silicate layer depositing unit, an yttriumoxide layer depositing unit, an yttrium silicate layer depositing unit,a lanthanum oxide layer depositing unit, and a lanthanum silicate layerdepositing unit. In the gate insulation film depositing unit 280, a gateinsulation film 16B is deposited on the front surface of the nitridefilm 15B of the wafer W (at step 5, FIG. 24F).

[0156] After the gate insulation film 16B has been deposited, the waferW is unloaded from the gate insulation film depositing unit 280 and thenloaded to an annealing unit 290. In the annealing unit 290, a heatingstep is performed for the gate insulation film 16B (at step 6). At theheating step for the gate insulation film 16B, the gate insulation film16B is reformed.

[0157] After the heating step for the gate insulation film 16B has beencompleted, the wafer W is unloaded from the annealing unit 290 and thenloaded to a gate electrode barrier film depositing unit 400. The gateelectrode barrier film servers as a barrier for the gate insulation film16B and a gate electrode that will be formed at the next step. Examplesof the barrier film depositing unit 400 are a manganese film depositingunit, a niobium layer depositing unit, an aluminum layer depositingunit, a molybdenum layer depositing unit, a zirconium layer depositingunit, a vanadium layer depositing unit, a cobalt layer depositing unit,a rhenium layer depositing unit, an iridium layer depositing unit, aplatinum layer depositing unit, and a ruthenium oxide layer depositingunit. In the gate electrode barrier film depositing unit 400, a gateelectrode barrier film 17B is deposited (at step 7, FIG. 25A).

[0158] After the gate electrode barrier film 17B has been deposited, theresultant wafer W is unloaded from the gate electrode barrier filmdepositing unit 400 and then loaded to a gate electrode depositing unit410. In the gate electrode depositing unit 410, a gate electrode 18B isdeposited (at step 8, FIG. 25B). The gate electrode depositing unit 410is a unit that deposits a gate electrode. An example of the gateelectrode depositing unit 410 is a tungsten layer depositing unit or analuminum layer depositing unit. After the forgoing steps have beencompleted, the resultant wafer W is unloaded from the processingapparatus 4.

[0159] In the processing apparatus 4 according to the fourth embodimentof the present invention, since the forgoing eight steps can besuccessively performed without an exposure to outer air, films that arebeing deposited are prevented from being oxidized and deteriorated. As aresult, films can be deposited in high quality. In addition, since manyprocessing units are disposed around one transferring chamber, aprocessing apparatus having a higher area efficiency can be provided.

[0160] (Fifth Embodiment)

[0161]FIG. 26 is a schematic diagram showing an outlined structure of aprocessing apparatus 5 according to a fifth embodiment of the presentinvention. FIGS. 26A and 26B are a plan view and a side view of theprocessing apparatus 5, respectively. In the processing apparatus 5according to the fifth embodiment of the present invention, theprocessing unit group disposed around the transferring chamber 50 of theprocessing apparatus 4 according to the fourth embodiment of the presentinvention is disposed as upper units and lower units. Thus, thetransferring chamber 50 vertically extends. Correspondingly, atransferring arm 33 is structured so that it can be rotated, expanded,contracted, and largely moved in the vertical direction.

[0162] As lower units disposed around the transferring chamber 50, thereare three units that are a pre-cleaning unit 240, an annealing unit 250,and an interface oxide film forming unit 260. As upper units disposedaround the transferring chamber 50, there are five units that are anitride film forming unit 270, a gate insulation film depositing unit280, an annealing unit 290, a gate electrode barrier film depositingunit 400, and a gate electrode depositing unit 410.

[0163] In addition, the lower units and the upper units are laid out insuch a manner that one upper unit is disposed between two adjacent lowerunits so as to prevent each lower unit from interfering with each upperunit. Thus, as an advantage, each lower unit can be easily maintainedand inspected.

[0164] In the processing apparatus 5 according to the fifth embodimentof the present invention, since many processing units are disposed ontwo stages around one transferring chamber 50, the processing apparatus5 has a higher area efficiency than the other structures. When unitsthat have a relatively lower height (for example, ALD units) aredisposed on the lower stage of the apparatus, the vertical moving rangeof the transferring arm 33 can be minimized. When each unit has astructure in which a maintenance work can be performed on other than thetop, upper units and lower units can be straightly piled up.

[0165] (Sixth Embodiment)

[0166]FIG. 27 is a plan view showing a processing apparatus 6 accordingto a sixth embodiment of the present invention. In the processingapparatus 6 according to the sixth embodiment of the present invention,six processing units U1 to U6 are disposed around a first transferringchamber 30. In addition, six processing units U7 to U12 are disposedaround a second transferring chamber 50. As a result, in the processingapparatus 5, 12 processing units U1 to U12 are disposed. Thus, in theprocessing apparatus 6 according to the sixth embodiment of the presentinvention, many processing units are disposed around one transferringchamber. As a result, the processing apparatus has a higher areaefficiency than other structures. In addition, since a wafer W can besuccessively processed without an exposure to outer air. As a result,films that are being deposited can be prevented from being oxidized anddeteriorated. Thus, films can be deposited in high quality.

[0167] The forgoing embodiments of the present invention present threefabrication processes for semiconductor devices with referent to therespective flow charts. When the processing apparatuses according to theforgoing embodiments of the present invention use for example an etchingunit, an ashing unit, an ion doping unit, a heating unit, a cleaningunit, and a coating and developing unit other than the forgoingprocessing units, the present invention can be applied to otherprocesses. In addition, the present invention can be applied for afabricating method for an LCD other than a semiconductor device.

[0168] Although the present invention has been shown and described withrespect to an embodiment thereof, it should be understood by thoseskilled in the art that the foregoing and various other changes,omissions, and additions in the form and detail thereof may be madetherein without departing from the spirit and scope of the presentinvention.

1-26. (Canceled)
 27. A transferring apparatus, comprising: an arm thatcan be expanded, contracted, and swiveled; and a target substrateholding member, disposed on the forward end side of the arm, that has ashape asymmetrical to a direction which the arm is expanded andcontracted.
 28. The transferring apparatus as set forth in claim 27,further comprising a transferring mechanism that has: a second arm thatcan be expanded, contracted, and swiveled; and a second target substrateholding member, disposed on the forward end side of the second arm,wherein a center position of the swiveling of each of the arm and thesecond arm is fixed.
 29. The transferring apparatus as set forth inclaim 28, wherein the center position of the swiveling of each of thearm and the second arm is defined so that a target substrate can bedirectly transferred by the expansion and the contraction of the arm andthe second arm.
 30. A transferring method of two transferring arms thatcan be expanded, contracted, and swiveled and that are adjacentlydisposed, each of the transferring arms having a target substrateholding member, the target substrate holding member having a concaveportion and a convex portion facing the other transferring arm, themethod comprising: causing the target substrate holding member of thefist transferring arm to be expanded toward nearly a center of theswiveling of the second transferring arm and the target substrateholding member of the second transferring arm and the target substrateholding member of the second transferring arm to be expanded toward adirection deviating from a center of the swiveling of the firsttransferring arm so that the concave portion and the convex portion ofthe target substrate holding member of the first transferring arm facethe convex portion and the concave portion of the second transferringarm, respectively; and transferring the target substrate between thefirst transferring arm and the second transferring arm.
 31. Atransferring method of two transferring arms that can be expanded,contracted, and swiveled and that are adjacently disposed, each of thetransferring arms having a target substrate holding member, the targetsubstrate holding member having a concave portion and a convex portionfacing the other transferring arm, the method comprising: causing thetarget substrate holding member of the first transferring arm to beexpanded toward a direction deviating from a center of a swiveling ofthe second transferring arm and the target substrate holding member ofthe second transferring arm to be expanded toward a direction deviatingfrom a center of the swiveling of the first transferring arm so that theconcave portion and the convex portion of the target substrate holdingmember of the first transferring arm face the convex portion and theconcave portion of the target substrate holding member of the secondtransferring arm, respectively; and transferring the target substratebetween the first transferring arm and the second transferring am.